K4B4G1646E-BYK0
Samsung Electronics
The Samsung K4B4G1646E-BYK0 is a DRAM chip featuring DDR3L SDRAM technology. It offers a 4Gbit capacity and operates at 1.5V.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| SVHC Present |
This memory component, part number MT46H64M16LFBF-6IT:B, is manufactured by Micron Technology. It falls under the category of Memory ICs.
The component is specified as RoHS3 Compliant, indicating adherence to environmental standards for hazardous substances. It also has a Moisture Sensitivity Level (MSL) of 1 Unlimited, suggesting it is not highly sensitive to ambient moisture. The REACH status is noted as Unaffected.
Further technical specifications such as memory type, data width, organization, speed, voltage, interface, package, and operating temperature are not detailed in the provided information and would typically be found in the manufacturer's datasheet. This part is suitable for applications requiring reliable memory solutions where environmental compliance is a consideration.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, the REACH status is REACH Unaffected.