| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,218 pcs
|
8218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,638 pcs
|
1638 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
115 pcs
|
115 pcs | On Request | 1 | On Request | On Request | 1120+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Memory Size | |
| Memory Type | |
| Operating Voltage | |
| SVHC Present | |
| Storage Temperature |
The Samsung K4B4G1646E-BYK0 is a DRAM chip utilizing DDR3L SDRAM technology. This component provides a substantial 4Gbit memory capacity, organized as 256Mx16.
Designed for efficient operation, it requires an operating voltage of 1.5V. The chip is housed in a 96-Pin FBGA package, suitable for surface-mount applications.
This part is classified as obsolete, indicating it is no longer in active production. Its RoHS status is Non-Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4B4G1646E-BYK0 is a DDR3L SDRAM chip.
The memory size is 4 Gbit.
The operating voltage is 1.5V.
It uses a 96-Pin FBGA package.
The RoHS status is Non-Compliant.
The MSL is 1 Unlimited.