MMRF1310HR5
NXP Semiconductors
The NXP Semiconductors MMRF1310HR5 is an LDMOS RF Power MOSFET designed for RF applications. It operates at 50V and delivers 300W of power at 230MHz.
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2,097 pcs
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2097 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The MRFE6VP6300HR3 from NXP Semiconductors is a dual-channel RF power FET transistor utilizing LDMOS technology. This device is designed for demanding RF applications, offering a power output of 300W and operating at frequencies up to 230MHz.
With a maximum voltage rating of 50V and a typical gain of 26.5dB, the MRFE6VP6300HR3 is suitable for various high-frequency power amplification tasks. The transistor has a typical current rating of 100 mA.
This component is configured for dual-channel operation and features a chassis mount package (NI-780-4), facilitating integration into robust system designs. It adheres to RoHS3 compliance standards and has a Moisture Sensitivity Level (MSL) of 1.
The MRFE6VP6300HR3 is an effective solution for applications requiring reliable RF power amplification in a compact and mountable form factor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRFE6VP6300HR3 has a power output of 300W.
The MRFE6VP6300HR3 operates at a frequency of 230MHz.
The MRFE6VP6300HR3 has a maximum voltage rating of 50V.
The MRFE6VP6300HR3 uses LDMOS technology.
The MRFE6VP6300HR3 is chassis mounted.
The MRFE6VP6300HR3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRFE6VP6300HR3 is 1 Unlimited.