| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
76 pcs
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76 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
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| Current | |
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| Gain | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Tape & Reel | |
| Technology | |
| Voltage |
The MMRF1310HR5 from NXP Semiconductors is a high-power RF MOSFET utilizing LDMOS technology. This device is designed for demanding RF applications, offering a robust solution for power amplification.
Key electrical specifications include an operating voltage of 50V and a power output of 300W. The MOSFET operates efficiently at a frequency of 230MHz, with a gain of 26.5dB. It is configured as a dual-channel device and features a current handling capability of 100 mA.
This component is designed for chassis mounting, utilizing the NI-780-4 package. Its construction and specifications make it suitable for various high-frequency power applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50V.
The power output is 300W.
The operating frequency is 230MHz.
It uses LDMOS technology.
It is chassis mounted.