| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,450 pcs
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13450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MPSA13 is an NPN Silicon Darlington Transistor manufactured by CJ, suitable for special purpose applications. It offers a collector-emitter voltage (Vces) of 30V and a continuous collector current (Ic) of 500mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 5,000 to 20,000 depending on the specific model and operating conditions. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 1.5V, and the base-emitter on voltage (Vbe(on)) is a maximum of 2.0V.
This device operates within a junction temperature range of -55 to +150°C. It is available in a TO-92 package and is suitable for through-hole mounting. The datasheet indicates that Pb-Free packages are available.
The MPSA13 is designed for applications requiring high gain. Its specifications make it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 30 Vdc.
The maximum continuous collector current is 500 mAdc.
The package type is TO-92 (through-hole).
The operating and storage junction temperature range is -55°C to +150°C.
The DC current gain is minimum 5,000 at 10 mAdc and minimum 10,000 at 100 mAdc (VCE=5V).
Yes, Pb-Free packages are available.
The current-gain bandwidth product (fT) is 125 MHz minimum at 10 mAdc, 5V, 100 MHz.