PDTC114ET215
NXP Semiconductors
The NXP Semiconductors PDTC114ET215 is an NPN Resistor-Equipped Transistor (RET) in a SOT23 package. It features built-in bias resistors and a 100 mA output current capability.
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMUN2111LT1 is a PNP silicon surface mount transistor from On Semiconductor, part of the MMUN2111LT1 Series. This device integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and lowers component count.
Key electrical specifications include a maximum collector-emitter voltage of 50 Vdc and a maximum collector current of 100 mAdc. The transistor is housed in a SOT-23 package, designed for low power surface mount applications. The SOT-23 package features modified gull-winged leads that absorb thermal stress during soldering, preventing damage to the die.
Thermal characteristics include a total device dissipation of 246 mW at 25°C (FR-4 @ Minimum Pad) and 400 mW at 25°C (FR-4 @ 1.0 x 1.0 inch Pad). The junction and storage temperature range is -55 to +150 °C. The device is available in 8 mm embossed tape and reel packaging.
This series is considered a preferred device, offering a good balance of performance and value for various applications requiring a pre-biased PNP transistor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50 Vdc.
The maximum collector current is 100 mAdc.
The MMUN2111LT1 is supplied in a SOT-23 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
