| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
530 pcs
|
530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The MMBTA64LT1 is a PNP silicon Darlington transistor manufactured by ON Semiconductor. It is designed for applications requiring high current gain and low saturation voltage. The device features a maximum collector-emitter voltage (Vces) of -30Vdc and a continuous collector current (Ic) of -500mAdc.
Key electrical characteristics include a minimum DC current gain (hFE) ranging from 5,000 to 20,000 depending on the operating conditions. The collector-emitter saturation voltage (Vce(sat)) is a maximum of -1.5Vdc, and the base-emitter on voltage (Vbe(on)) is a maximum of -2.0Vdc at specified currents. The current-gain bandwidth product (fT) is 125MHz at 10mAdc and -5.0Vdc.
This transistor is supplied in a SOT-23 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is rated for a junction and storage temperature range of -55°C to +150°C. The device is Pb-free, Halogen-free/BFR-free, and RoHS compliant, with an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 Vdc
500 mAdc
5000
SOT-23
-55 to +150 °C