MMBTA64LT1 The MMBTA64LT1 is a PNP Darlington transistor from ON Semiconductor, designed for general-purpose amplification and switching applications. It features a 30V collector-emitter voltage and is housed in a compact SOT-23 package.
Mfr Part #:

MMBTA64LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBTA64LT1 is a PNP Darlington transistor from ON Semiconductor, designed for general-purpose amplification and switching applications. It features a 30V collector-emitter voltage and is housed in a compact SOT-23 package.
Total Stock: 530 pcs
$ Price Range: $0.99

MMBTA64LT1 Available from 1 distributor

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MMBTA64LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Collector - Emitter Saturation Voltage
Collector Current
Collector Cutoff Current
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Current-Gain - Bandwidth Product
Emitter Cutoff Current
Emitter-Base Voltage
Gain DC Current (Minimum @ IC = -10 mAdc, VCE = -5.0 Vdc)
Gain DC Current (Minimum @ IC = -100 mAdc, VCE = -5.0 Vdc)
Halogen Free
Junction and Storage Temperature
Mounting Type
Power Dissipation Derate (@ TA = 25 °C, Alumina Substrate)
Power Dissipation Derate (@ TA = 25 °C, FR -5 Board)
Power Dissipation Total (Maximum @ TA = 25 °C, Alumina Substrate)
Power Dissipation Total (Maximum @ TA = 25 °C, FR -5 Board)
Tape & Reel
Thermal Resistance Junction Ambient (Nominal @ Alumina Substrate)
Thermal Resistance Junction Ambient (Nominal @ FR -5 Board)

MMBTA64LT1 Description

Short technical summary and product information.

The MMBTA64LT1 is a PNP silicon Darlington transistor manufactured by ON Semiconductor. It is designed for applications requiring high current gain and low saturation voltage. The device features a maximum collector-emitter voltage (Vces) of -30Vdc and a continuous collector current (Ic) of -500mAdc.

 

Key electrical characteristics include a minimum DC current gain (hFE) ranging from 5,000 to 20,000 depending on the operating conditions. The collector-emitter saturation voltage (Vce(sat)) is a maximum of -1.5Vdc, and the base-emitter on voltage (Vbe(on)) is a maximum of -2.0Vdc at specified currents. The current-gain bandwidth product (fT) is 125MHz at 10mAdc and -5.0Vdc.

 

This transistor is supplied in a SOT-23 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is rated for a junction and storage temperature range of -55°C to +150°C. The device is Pb-free, Halogen-free/BFR-free, and RoHS compliant, with an MSL rating of 1.

MMBTA64LT1 Quick Information

Product Type: Transistor
Canonical Name: MMBTA64LT1 PNP Darlington Transistor
Subcategory: Single

MMBTA64LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBTA64LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA64LT1 Features

  • PNP silicon Darlington transistor.
  • Maximum collector-emitter voltage -30V.
  • Continuous collector current 500mA.
  • High DC current gain up to 20,000.
  • Compact SOT-23 surface-mount package.

MMBTA64LT1 Applications

  • General purpose amplification.
  • Low power switching applications.
  • High gain current amplification.
  • Space-constrained designs.

MMBTA64LT1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA64LT1?

-30 Vdc

What is the continuous collector current rating for the MMBTA64LT1?

500 mAdc

What is the minimum DC current gain (hFE) for the MMBTA64LT1?

5000

What is the package type for the MMBTA64LT1 transistor?

SOT-23

What is the operating temperature range for the MMBTA64LT1?

-55 to +150 °C

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