| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
633,000 pcs
|
633000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The ON Semiconductor SMMBTA56WT1G is a PNP silicon transistor housed in a compact SC-70 (SOT-323) surface-mount package. This device is rated for a maximum collector-emitter voltage of 80V and a continuous collector current of 500mA. It offers a DC current gain (hFE) of 100 at 100mA collector current and a current-gain bandwidth product of 50MHz.
Key electrical characteristics include a collector-emitter saturation voltage of 250mV at 100mA collector current and a base-emitter on-voltage of 1.2V. The transistor operates over a wide temperature range of -55°C to +150°C.
This component is suitable for various switching and amplification applications where a small-signal PNP transistor is required. Its surface-mount package facilitates automated assembly processes on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -80 Vdc.
The continuous collector current is -500 mAdc.
The DC current gain (hFE) is 100 at 100mA collector current and 1.0V Vce.
The operating temperature range is -55°C to +150°C.
The SMMBTA56WT1G is supplied in an SC-70, SOT-323 package.
The SMMBTA56WT1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.