MMBTA13LT1 The ON Semiconductor MMBTA13LT1 is an NPN Silicon Darlington Amplifier Transistor. It features a collector-emitter voltage of 30V and a continuous collector current of 300mA.
Mfr Part #:

MMBTA13LT1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBTA13LT1 is an NPN Silicon Darlington Amplifier Transistor. It features a collector-emitter voltage of 30V and a continuous collector current of 300mA.
Total Stock: 3,756 pcs
$ Price Range: $0.99

MMBTA13LT1 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,696 pcs
2696 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,060 pcs
1060 pcs On Request 1 On Request On Request On Request On Request On Request

MMBTA13LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Collector Current
Collector Cutoff Current
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Emitter Cutoff Current
Emitter-Base Voltage
Halogen Free
Junction and Storage Temperature
Pb-Free
Pd (Maximum @ Alumina Substrate, (Note 2) TA = 25 °C)
Pd (Maximum @ FR -5 Board (Note 1) TA = 25 °C)
Tape & Reel
hFE (Minimum @ IC = 10 mAdc, VCE = 5.0 Vdc)
hFE (Minimum @ IC = 100 mAdc, VCE = 5.0 Vdc)

MMBTA13LT1 Description

Short technical summary and product information.

The MMBTA13LT1 from ON Semiconductor is a high-performance NPN Silicon Darlington Amplifier Transistor designed for various amplification applications. This component offers a maximum collector-emitter voltage (VCES) of 30V and a continuous collector current (IC) of up to 300mA.

 

Key electrical characteristics include a DC current gain (hFE) ranging from 5000 to 10,000, and a collector-emitter saturation voltage (VCE(sat)) of 1.5V maximum. The transistor operates within a junction and storage temperature range of -55 to +150°C.

 

Packaged in a compact SOT-23 (TO-236) case, the MMBTA13LT1 is suitable for surface-mount designs. It is supplied in tape and reel packaging with a standard quantity of 3,000 units. The device is Pb-Free and Halogen Free, adhering to modern environmental standards.

MMBTA13LT1 Quick Information

Product Type: Transistor
Canonical Name: NPN Silicon Darlington Amplifier Transistor
Subcategory: Single

MMBTA13LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBTA13LT1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBTA13LT1 Features

  • 30V collector-emitter voltage rating.
  • 300mA continuous collector current.
  • High DC current gain up to 10,000.
  • SOT-23 surface-mount package.
  • Pb-Free and Halogen Free.

MMBTA13LT1 Applications

  • Used in low-power switching circuits
  • Ideal for signal amplification
  • Suitable for PCB surface-mount applications
  • Applicable in consumer electronics

MMBTA13LT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBTA13LT1?

The maximum collector-emitter voltage (VCES) for the MMBTA13LT1 is 30 Vdc.

What is the continuous collector current rating of the MMBTA13LT1 transistor?

The MMBTA13LT1 has a continuous collector current (IC) rating of 300 mAdc.

What is the DC current gain (hFE) of the MMBTA13LT1 at 100mA?

The DC current gain (hFE) of the MMBTA13LT1 is a minimum of 10,000 at IC = 100 mAdc and VCE = 5.0 Vdc.

What package type is the MMBTA13LT1 supplied in?

The MMBTA13LT1 is supplied in a SOT-23 package.

What is the RoHS status of the MMBTA13LT1?

The MMBTA13LT1 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MMBTA13LT1?

The Moisture Sensitivity Level (MSL) for the MMBTA13LT1 is 1 Unlimited.

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