MMBTA92LT1G
On Semiconductor
The MMBTA92LT1G is a PNP bipolar junction transistor from ON Semiconductor. It offers a high voltage rating of 300V and a continuous collector current of 500mA.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,696 pcs
|
2696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,060 pcs
|
1060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The MMBTA13LT1 from ON Semiconductor is a high-performance NPN Silicon Darlington Amplifier Transistor designed for various amplification applications. This component offers a maximum collector-emitter voltage (VCES) of 30V and a continuous collector current (IC) of up to 300mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 5000 to 10,000, and a collector-emitter saturation voltage (VCE(sat)) of 1.5V maximum. The transistor operates within a junction and storage temperature range of -55 to +150°C.
Packaged in a compact SOT-23 (TO-236) case, the MMBTA13LT1 is suitable for surface-mount designs. It is supplied in tape and reel packaging with a standard quantity of 3,000 units. The device is Pb-Free and Halogen Free, adhering to modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCES) for the MMBTA13LT1 is 30 Vdc.
The MMBTA13LT1 has a continuous collector current (IC) rating of 300 mAdc.
The DC current gain (hFE) of the MMBTA13LT1 is a minimum of 10,000 at IC = 100 mAdc and VCE = 5.0 Vdc.
The MMBTA13LT1 is supplied in a SOT-23 package.
The MMBTA13LT1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBTA13LT1 is 1 Unlimited.
