BAT54A/215
Nexperia USA Inc.
The Nexperia USA Inc. BAT54A/215 is a diode. It is RoHS3 Compliant and has an MSL rating of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 703 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Tape & Reel |
The MMBT5401G is a PNP bipolar junction transistor (BJT) from Unisonic, designed for general-purpose amplification and switching applications. It offers a collector-emitter breakdown voltage of 150V and can handle a maximum continuous collector current of 600mA.
This transistor operates with a typical DC current gain (hFE) of 150 at 10mA collector current and 5V Vce. Its transition frequency (fT) is 100MHz, making it suitable for moderate frequency applications. The collector-emitter saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA collector current and 5mA base current.
The MMBT5401G comes in a compact SOT-23 surface-mount package, suitable for automated assembly processes. It has a maximum power dissipation of 350mW and an operating temperature range up to +150°C (Tj).
This component is RoHS3 compliant and has an MSL rating of 1, indicating unlimited shelf life under recommended storage conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) for the MMBT5401G is 150V.
The MMBT5401G transistor has a maximum collector current (Ic) of 600mA.
The MMBT5401G is supplied in a SOT-23 package.
The MMBT5401G can operate at temperatures up to +150°C (Tj).
The MMBT5401G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MMBT5401G is 1.
