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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The CJ MMBT5401 is a PNP bipolar junction transistor (BJT) suitable for medium power amplification and switching tasks. It is constructed using epitaxial planar die technology.
Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of -150V and a continuous collector current (IC) of -0.6A. The device offers a DC current gain (hFE) ranging from 50 to 300, and a transition frequency (fT) of up to 300MHz at 100MHz.
This transistor comes in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. It is also available in a lead-free version. The complementary NPN type is the MMBT5551.
Applications include general purpose amplification and switching circuits where a PNP transistor is required.
-150 V
-0.6 A
50 to 300
100 to 300 MHz
SOT-23
3000
