L8550QLT1G The L8550QLT1G is a PNP Silicon Bipolar Transistor from LRC Leshan Radio Co Ltd. It features a maximum collector-emitter voltage of -25V and a continuous collector current of -800mA.
Mfr Part #:

L8550QLT1G

Available from 3 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The L8550QLT1G is a PNP Silicon Bipolar Transistor from LRC Leshan Radio Co Ltd. It features a maximum collector-emitter voltage of -25V and a continuous collector current of -800mA.
Total Stock: 204,069 pcs

L8550QLT1G Available from 3 distributors

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196,859 pcs
196859 pcs On Request 1 On Request On Request 21+ On Request On Request
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4,660 pcs
4660 pcs On Request 1 On Request On Request 24+ On Request On Request
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2,550 pcs
2550 pcs On Request 1 On Request On Request 1043P//A/ On Request On Request

L8550QLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Style
Package / Case
Tape & Reel

L8550QLT1G Description

Short technical summary and product information.

The L8550QLT1G is a PNP Silicon Bipolar Transistor manufactured by LRC Leshan Radio Co Ltd. This general-purpose transistor is designed for small signal applications.

 

Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of -25V and a maximum continuous collector current (Ic) of -800mA. The device operates within a junction and storage temperature range of -55°C to +150°C.

 

Packaged in a standard SOT-23 surface-mount case, the L8550QLT1G is supplied on tape and reel with a standard package quantity of 3000 units. It is RoHS3 compliant.

 

This transistor is suitable for various general-purpose switching and amplification applications where a PNP type is required.

L8550QLT1G Quick Information

Product Type: Bipolar Transistor
Series: L8550
Canonical Name: L8550QLT1G PNP Silicon Small Signal Bipolar Transistor
Subcategory: Single

L8550QLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

L8550QLT1G Features

  • PNP Silicon Bipolar Transistor
  • Maximum Collector-Emitter Voltage: -25V
  • Maximum Continuous Collector Current: -800mA
  • SOT-23 Surface Mount Package
  • RoHS3 Compliant

L8550QLT1G Applications

  • Suitable for low-power switching circuits.
  • Used in signal amplification applications.
  • Ideal for general purpose amplification.
  • Used in driver stage circuits.

L8550QLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the L8550QLT1G?

-25V

What is the maximum continuous collector current?

-800mA

What is the power dissipation rating?

225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient.

What is the operating temperature range?

-55°C to +150°C

What is the package type?

SOT-23

What is the thermal resistance junction-to-ambient?

556°C/W on FR-5 board and 417°C/W on alumina substrate.

Is the device available in tape and reel packaging?

Yes, with a standard quantity of 3000 pieces per reel.

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