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1,950 pcs
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1950 pcs | On Request | 1 | On Request | On Request | 1047/1114 | On Request | On Request |
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The MMBT39067F from Diodes Incorporated is a single Pnp bipolar junction transistor (BJT). It is designed for applications requiring a collector-emitter voltage (VCEO) of up to -40V and can handle a maximum DC collector current of 0.2A. The transistor offers a power dissipation rating of 300mW.
This component features a gain-bandwidth product (fT) of 250 MHz and a DC current gain (Hfe) of up to 300. It operates within a temperature range of -55C to +150C. The MMBT39067F is supplied in a compact SOT-23-3 surface-mount package, measuring 3.05mm in length and 1.4mm in width with a height of 1mm.
Its specifications make it suitable for general-purpose amplification and switching applications in various electronic circuits. The SOT-23-3 package is widely used for its small footprint, enabling high-density circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 0.2 A.
The collector-emitter voltage (VCEO) is -40 V.
It is available in an SOT-23-3 surface-mount package.
The operating temperature range is -55°C to +150°C.
The power dissipation is 300 mW.
The maximum DC current gain (hFE) is 300.
The gain bandwidth product (fT) is 250 MHz.