| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,892 pcs
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2892 pcs | On Request | 1 | On Request | On Request | 1141 | On Request | On Request | |
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT2222A7F from Diodes Incorporated is a versatile NPN bipolar junction transistor (BJT) suitable for a wide range of electronic circuits. It features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 0.6A, making it capable of handling moderate power loads.
This transistor operates with a gain bandwidth product (fT) of 300MHz, indicating good performance in high-frequency applications. The maximum power dissipation (Pd) is rated at 300mW, and it has a typical DC current gain (Hfe) of 300. The operating temperature range spans from -55°C to +150°C.
Packaged in a surface-mount SOT-23-3 configuration, the MMBT2222A7F is designed for automated assembly processes. Its compact dimensions, with a length of 3.05mm, width of 1.4mm, and height of 1mm, make it suitable for space-constrained designs. The transistor is supplied in cut tape packaging.
This component is well-suited for general-purpose amplification, switching applications, and as a driver in various electronic systems. Its robust specifications and surface-mount package facilitate integration into modern PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2222A7F is 40V.
The continuous collector current rating is 0.6A.
The operating temperature range is -55°C to +150°C.
The MMBT2222A7F is supplied in a SOT-23-3 surface mount package.