| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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192 pcs
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192 pcs | On Request | 1 | On Request | On Request | 1143 | On Request | On Request |
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The MMBT2907A-7-F is a PNP bipolar junction transistor manufactured by Diodes Incorporated. This component is designed for general-purpose applications and features a collector-emitter voltage (VCEO) of -60V and a continuous collector current of 0.6A.
Key electrical characteristics include a maximum power dissipation of 300mW, a gain bandwidth product (fT) of 200MHz, and a DC current gain (hFE) ranging from a minimum of 100 to a maximum of 300. The transistor operates within a temperature range of -55°C to +150°C.
Packaged in a compact SOT-23 surface-mount case, the MMBT2907A-7-F is suitable for automated assembly processes. The standard package quantity is 3000 units on a reel. Its specifications make it a versatile component for various electronic circuits requiring PNP amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
SOT-23
-55 °C to +150 °C
0.6 A
200 MHz
300 mW
100 to 300