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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
538,020 pcs
|
538020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Capacitance | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Delay Time | |
| Emitter Capacitance | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| IC (Maximum) | |
| ICBO (Maximum @ IE = 0, VCB = 60 V) | |
| ICBO (Maximum @ IE = 0; VCB = 60 V; Tj = 125 °C) | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Rise Time | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Tamb | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| VBEsat (@ IC = 150 mA; IB = 15 mA; note 1) | |
| VBEsat (Maximum @ IC = 500 mA; IB = 50 mA; note 1) | |
| VCEO (Maximum @ Open base) | |
| VCEsat (Maximum @ IC = 150 mA; IB = 15 mA; note 1) | |
| VCEsat (Maximum @ IC = 500 mA; IB = 50 mA; note 1) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Minimum @ IC = 20 mA; VCE = 20 V; f = 100 MHz) | |
| hFE (@ IC = 150 mA; VCE = 10 V) | |
| hFE (Minimum @ IC = -0.1 mA, VCE = -10 V) | |
| hFE (Minimum @ IC = 10 mA; VCE = 10 V; Tamb = −55 °C) | |
| hFE (Minimum @ IC = 150 mA; VCE = 1 V) | |
| hFE (Minimum @ IC=1 mA, VCE=10 V) | |
| hFE (Minimum @ IC=500 mA, VCE=10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) | |
| ptot (Maximum @ Tamb ≤ 25 °C, note 1) |
The Nexperia MMBT2222A,215 is an NPN bipolar junction transistor (BJT) suitable for switching and linear amplification tasks. It is housed in a compact SOT23 plastic package, making it ideal for surface-mount designs.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of up to 600mA. The transistor offers a high transition frequency (fT) of 300MHz, enabling fast switching operations. Its DC current gain (hFE) ranges from 100 to 300 at 150mA and 10V.
This device operates within a wide temperature range from -65°C to +150°C. The SOT23 package is designed for surface mounting, facilitating automated assembly processes. The PNP complement to this transistor is the PMBT2907A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40V.
The continuous collector current (IC) is 600mA.
The transition frequency (fT) is 300MHz.
The operating ambient temperature range is -65°C to +150°C.
It is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The DC current gain (hFE) is a minimum of 100 at 150mA and 10V.
The collector-emitter saturation voltage (Vce Sat) is a maximum of 1V at 500mA collector current and 50mA base current.