| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
139,123 pcs
|
139123 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| SVHC Present | |
| Storage Temperature |
The MMBT2222A is an NPN bipolar junction transistor (BJT) designed for switching and linear amplification applications. Manufactured by NXP Semiconductors, this component is housed in a compact SOT23 plastic package, making it suitable for surface-mount designs.
Key electrical characteristics include a maximum collector current of 600 mA and a collector-emitter voltage of up to 40 V. The transistor exhibits a high transition frequency (fT) of 300 MHz, indicating good high-frequency performance. Its PNP complement is the PMBT2907A.
With a thermal resistance of 500 K/W, the MMBT2222A is designed for operation within an ambient temperature range of -65 °C to +150 °C. The SOT23 package is a standard surface-mount type, facilitating automated assembly processes.
This transistor is suitable for a variety of electronic circuits requiring efficient switching or amplification at moderate power levels.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 40 V.
It is available in a surface-mount SOT-23 package.
The operating ambient and storage temperature range is -65°C to +150°C.
The maximum DC collector current is 600 mA, with peak collector current up to 800 mA.
The minimum transition frequency (fT) is 300 MHz at IC = 20 mA, VCE = 20 V.
At IC = 150 mA and VCE = 10 V, the DC current gain is 100 to 300.
At IC = 150 mA and IB = 15 mA, the maximum VCE(sat) is 300 mV.