IPD60R180P7S
Infineon
The Infineon IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features low switching and conduction losses, making it suitable for various power applications.
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2,330 pcs
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2330 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The MLD1N06CL from On Semiconductor is a rugged N-Channel Logic Level Power MOSFET designed for direct interfacing with microcontrollers. It offers integrated current limiting for short circuit protection and Gate-Source/Gate-Drain clamping for ESD and over-voltage protection, respectively.
This MOSFET is suitable for applications such as automotive fuel injector drivers or incandescent lamp drivers where high in-rush currents or shorted load conditions may occur. It features a low on-resistance with a typical value of 750 mΩ. The device operates within a temperature range of -50°C to 150°C.
The MLD1N06CL is available in a DPAK surface mount package. It is designed to be robust and can withstand electrostatic discharge up to 2.0 kV. The device is also Pb-Free compliant.
The maximum drain-to-source voltage (VDSS) for the MLD1N06CL is 62 Vdc.
The MLD1N06CL has a continuous drain current (ID) rating of 1.8 Adc.
The typical on-resistance (RDS(on)) for the MLD1N06CL is 750 mΩ.
The operating and storage temperature range for the MLD1N06CL is -50°C to 150°C.
The MLD1N06CL is supplied in a DPAK package.
The MLD1N06CL is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MLD1N06CL is 1 Unlimited.