IPD60R180P7S The Infineon IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features low switching and conduction losses, making it suitable for various power applications.
Mfr Part #:

IPD60R180P7S

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features low switching and conduction losses, making it suitable for various power applications.
✓ Total Stock: 4,841 pcs

IPD60R180P7S Available from 3 distributors

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2,970 pcs
2970 pcs On Request 1 On Request On Request 2111+ On Request On Request
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1,718 pcs
1718 pcs On Request 1 On Request On Request On Request On Request On Request
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153 pcs
153 pcs On Request 1 On Request On Request 23+ On Request On Request

IPD60R180P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Industrial Grade
Lead Style
Mounting Type
Package / Case
SVHC Present
Storage Temperature
Tape & Reel

IPD60R180P7S Description

Short technical summary and product information.

The Infineon IPD60R180P7S is a 600V CoolMOS P7 series N-channel power MOSFET designed for high-voltage power applications. This 7th generation platform offers a revolutionary technology for high voltage power MOSFETs, combining fast switching with excellent ease of use. It is designed according to the superjunction (SJ) principle.

 

The IPD60R180P7S boasts extremely low switching and conduction losses, contributing to more efficient, compact, and cooler switching applications. Key electrical parameters include a maximum drain-source voltage of 650V, a maximum on-resistance of 180mΩ, a typical gate charge of 25nC, and a pulse drain current of 53A. The device also features excellent ESD robustness greater than 2kV (HBM).

 

This MOSFET is suitable for hard and soft switching applications, including PFC and LLC stages, due to its outstanding commutation ruggedness. Its benefits include ease of use, fast design-in through low ringing tendency, and simplified thermal management. The product is validated according to JEDEC standards.

 

Packaged in a DPAK (PG-TO252-3) surface mount package, the IPD60R180P7S is designed for applications such as PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS.

IPD60R180P7S Quick Information

Product Type: Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPD60R180P7S 600V CoolMOS P7 Power MOSFET
Subcategory: Power MOSFET

IPD60R180P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPD60R180P7S Features

  • 650V maximum drain-source voltage.
  • 180mΩ maximum on-resistance.
  • 25nC typical gate charge.
  • 53A pulse drain current.
  • DPAK surface mount package.

IPD60R180P7S Applications

  • Suitable for PFC and LLC stages.
  • Used in adapters and power supplies.
  • Applicable for server and telecom systems.
  • Ideal for PC Silverbox applications.
  • Designed for lighting systems.

IPD60R180P7S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPD60R180P7S?

The maximum drain-source voltage (VDS @ Tj,max) for the IPD60R180P7S is 650V.

What is the maximum on-resistance of the IPD60R180P7S MOSFET?

The maximum on-resistance (RDS(on),max) for the IPD60R180P7S is 180mΩ.

What is the typical gate charge for the IPD60R180P7S?

The typical gate charge (Qg,typ) for the IPD60R180P7S is 25nC.

What is the pulse drain current rating for the IPD60R180P7S?

The pulse drain current (ID,pulse) for the IPD60R180P7S is 53A.

What package type is the IPD60R180P7S available in?

The IPD60R180P7S is available in a DPAK package.

What is the RoHS status of the IPD60R180P7S?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPD60R180P7S?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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