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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJE3055 is a silicon Epitaxial-Base NPN transistor manufactured by Motorola Semiconductor. It is housed in a TO-220-3 package and features through-hole mounting.
This transistor is suitable for power switching circuits and general-purpose amplifiers. Key electrical specifications include a collector-emitter voltage of 60V and a collector current of 10A. The DC current gain is specified up to 10 Amperes, and the gain bandwidth product (fT) is a minimum of 2.0 MHz at 500 mAdc.
The MJE3055 has a maximum emitter-base voltage of 5V. The transistor element material is Silicon, and the contact plating is Tin, providing corrosion protection.
This component is designed for applications requiring robust switching and amplification capabilities. Its TO-220 package is common for power transistors, facilitating heat dissipation and ease of mounting onto circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
10A.
TO-220-3.
2.0 MHz minimum at 500 mA collector current.
NPN.
Through Hole.
MJE2955T from STMicroelectronics.