MJD32CJ The Nexperia USA Inc. MJD32CJ is a PNP bipolar transistor designed for power management applications. It offers a 100V collector-emitter voltage and 3A collector current.
Mfr Part #:

MJD32CJ

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. MJD32CJ is a PNP bipolar transistor designed for power management applications. It offers a 100V collector-emitter voltage and 3A collector current.
Total Stock: 500 pcs
$ Price Range: $0.99

MJD32CJ Available from 1 distributor

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MJD32CJ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Gain (Minimum/Maximum @ VCE = -4 V; IC = -3 A; Tamb = 25 °C)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Peak Collector Current
Power
Power Dissipation (Maximum @ Tmb ≤ 25 °C [1])
Supplier Device Package
Supplier Package
Thermal Resistance (Typical @ junction to ambient in free air [1])
Thermal Resistance (Typical @ junction to mounting base)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJD32CJ Description

Short technical summary and product information.

The Nexperia USA Inc. MJD32CJ is a PNP high power bipolar transistor housed in a DPAK, TO-252 (SOT428C) surface-mounted device plastic package. This transistor features a high thermal power dissipation capability and high energy efficiency due to less heat generation. It is electrically similar to the popular MJD32 series and offers a low collector emitter saturation voltage and fast switching speeds.

 

Key electrical specifications include a collector-emitter voltage of 100V and a continuous collector current of 3A. The peak collector current is rated at 5A for single pulses up to 1ms. DC current gain (hFE) is a minimum of 25 at 1A, 4V, and ranges from 10 to 50 at 3A, 4V. The collector-emitter saturation voltage is a maximum of 1.2V at 375mA, 3A. The transistor operates at frequencies up to 3MHz.

 

Thermal performance is critical for this high power device. It has a total power dissipation of 1.6W when mounted on an FR4 PCB at 25°C ambient, and up to 15W junction to mounting base at 25°C. The junction temperature can reach 150°C. Thermal resistance from junction to mounting base is 9 K/W, and from junction to ambient is 79 K/W.

 

Applications for the MJD32CJ include power management, load switching, linear mode voltage regulation, constant current drive backlighting, motor drive, and relay replacement. The device is supplied in a surface mount DPAK package.

MJD32CJ Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP High Power Bipolar Transistor
Subcategory: PNP

MJD32CJ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJD32CJ Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJD32CJ Features

  • PNP high power bipolar transistor.
  • 100V collector-emitter voltage rating.
  • 3A continuous collector current.
  • DPAK surface mount package.
  • High thermal power dissipation capability.

MJD32CJ Applications

  • Suitable for power management.
  • Used in load switch circuits.
  • Applicable for linear voltage regulators.
  • Ideal for motor drive applications.
  • Can be used for relay replacement.

MJD32CJ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the MJD32CJ transistor?

The collector-emitter voltage is 100V.

What is the maximum continuous collector current for the MJD32CJ?

The maximum continuous collector current is 3A.

What type of package is the MJD32CJ transistor in?

The MJD32CJ is in a DPAK, TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the operating temperature of the MJD32CJ transistor?

The operating junction temperature is up to 150°C.

Is the MJD32CJ RoHS compliant?

Yes, the MJD32CJ is RoHS3 Compliant.

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