| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia MJD32CAJ is a PNP high power bipolar transistor housed in a DPAK (TO-252) surface-mounted device plastic package. It features a high thermal power dissipation capability and high energy efficiency due to less heat generation. This transistor is electrically similar to the popular MJD32 series and boasts low collector-emitter saturation voltage and fast switching speeds.
Key electrical specifications include a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 3A. The DC current gain (hFE) is typically 25 at 1A and -4V, and ranges from 10 to 50 at 3A and -4V. The peak collector current (ICM) can reach 5A for a single pulse up to 1ms. The collector-emitter saturation voltage (VCEsat) is a maximum of 1.2V at 375mA and 3A.
With a total power dissipation (Ptot) of 1.6W at 25°C ambient temperature (on FR4 PCB) and 15W at 25°C junction to mounting base, this transistor is suitable for demanding applications. It operates within a junction temperature range of -55°C to 150°C. The device is AEC-Q101 qualified, indicating its suitability for automotive and high-reliability applications.
Applications for the MJD32CAJ include power management, load switching, linear mode voltage regulation, constant current drive backlighting, motor drives, and relay replacement. It is supplied in a DPAK (SOT428C) package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 100V.
The maximum continuous collector current (IC) is 3A.
The MJD32CAJ is supplied in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) package.
The operating junction temperature range is -55°C to 150°C.
Yes, the MJD32CAJ is AEC-Q101 qualified.