| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,665 pcs
|
1665 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The MJD112RL is a complementary Darlington power transistor manufactured by On Semiconductor. Designed for general-purpose power and switching applications, it is suitable for use in output or driver stages of switching regulators, converters, and power amplifiers.
Key electrical specifications include a collector-emitter voltage (VCEO) of 100V, a continuous collector current (IC) of 2A, and a peak collector current of 4A. The transistor has a maximum power dissipation of 1.75W at 25°C ambient temperature. It operates within a junction temperature range of -65°C to +150°C.
This device is available in a DPAK (TO-252-3) surface mount package, designed for ease of integration into PCB layouts. The lead-formed version is suitable for surface mount applications, and it is also available in tape and reel packaging for automated assembly processes.
The MJD112RL is electrically similar to the popular TIP31 and TIP32 series, offering a reliable solution for various power control needs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
The MJD112RL is available in a TO-252-3 (DPAK) surface-mount package.
The operating and storage junction temperature range is -65°C to +150°C.
The maximum continuous collector current (IC) is 2 Adc.
The minimum DC current gain is 1000 at 2A collector current and 3V collector-emitter voltage.
The total power dissipation at 25°C ambient temperature is 1.75 W.
The transition frequency (fT) is 25 MHz.