| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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69 pcs
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69 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The MJD112 is an NPN Darlington transistor manufactured by Motorola Semiconductor. It is designed for applications requiring high current gain and switching capabilities. Key electrical specifications include a maximum collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 2A. The transistor exhibits a high DC current gain (hFE) of 1000 at 2A and 3V, with a saturation voltage of 3V at 40mA and 4A.
This device operates within a temperature range of -65°C to 150°C. Its transition frequency is 25MHz. The MJD112 is packaged in a surface-mount DPAK (TO-252-3) package, facilitating integration into compact electronic designs. The tape and reel packaging option is available for automated assembly processes.
With its robust specifications, the MJD112 is suitable for power switching and amplification tasks in various electronic circuits. Its Darlington configuration provides significant current amplification, making it useful in applications where driving capability is critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJD112 is 100V.
The maximum continuous collector current for the MJD112 is 2A.
The minimum DC current gain (hFE) of the MJD112 at 2A and 3V is 1000.
The MJD112 transistor operates within a temperature range of -65°C to 150°C.
The MJD112 is available in a surface mount DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63).
