| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | 13/ | On Request | On Request |
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The MJ10016 is a high-power NPN Darlington transistor manufactured by Solid State Devices Inc (SSDI). This component is designed for applications requiring significant current handling and voltage blocking capabilities.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 500V and a continuous collector current rating of 50A. It offers a minimum DC current gain (hFE) of 25 at 20A and 5V. The transistor has a maximum power dissipation of 250W and a saturation voltage (Vce) of 5V at 10A and 50A.
Packaged in a TO-3 (TO-204AA) metal can, the MJ10016 is suitable for through-hole mounting. It operates within a wide temperature range of -65°C to 200°C (TJ), making it robust for demanding environments. The RoHS status is listed as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1.
This transistor is well-suited for power switching and amplification circuits where high voltage and current capabilities are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJ10016 is 500V.
The MJ10016 transistor has a continuous collector current rating of 50A.
The operating temperature range for the MJ10016 is -65°C to 200°C (TJ).
The MJ10016 is an NPN Darlington transistor.
The MJ10016 is supplied in a TO-3 package, also referred to as TO-204AA.
The MJ10016 is designed for through-hole mounting.