| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics MJ10016 is a high-performance NPN Darlington transistor housed in a TO-3 package. This component is engineered for demanding power applications, featuring a robust 500V collector-emitter breakdown voltage and a substantial 50A collector current capability.
With a maximum power dissipation of 250W, the MJ10016 is suitable for power switching and amplification circuits. Its Darlington configuration provides high current gain, specified at a minimum of 25 at 20A and 5V. The transistor operates across a wide temperature range from -65°C to 200°C (TJ), ensuring reliability in various environmental conditions.
The TO-204AA, TO-3 package type facilitates through-hole mounting, making it compatible with traditional PCB designs. The Vce saturation voltage is rated at a maximum of 5V at 10A and 50A, indicating efficient power transfer. This transistor is a reliable choice for power supply designs, motor control, and other high-current switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJ10016 is 500V.
The maximum continuous collector current for the MJ10016 is 50A.
The operating temperature range for the MJ10016 is -65°C to 200°C (TJ).
The MJ10016 is supplied in a TO-3 package.
The MJ10016 transistor is mounted using the through-hole method.