| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,910 pcs
|
2910 pcs | On Request | 1 | On Request | On Request | 99/01+ | On Request | On Request | |
|
949 pcs
|
949 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The MGF4916G series GaAs FET from Mitsubishi Electronic is a Super Low Noise InGaAs HEMT designed for use in L to Ku band amplifiers. Its hermetically sealed metal-ceramic package ensures minimum parasitic losses and is suitable for microstrip circuits. This component is mounted in a super 12 tape.
Key electrical characteristics include a low noise figure (NFmin.) of 0.80dB (MAX.) for the MGF4916G at 12GHz and a high associated gain (Gs) of 12.0dB (MIN.) at 12GHz. Recommended bias conditions are VDS=2V and ID=10mA.
The device features a gate-to-drain breakdown voltage of 60V and a total power dissipation of 50mW. The operating channel temperature can reach up to 125°C, with a storage temperature range of -65 to +125°C.
The GD-16 package is surface mountable, and the component is supplied on tape and reel, making it suitable for automated assembly processes in RF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum gate-drain breakdown voltage is 60V at IG=-10µA.
The maximum gate-source cut-off voltage is -3V at VDS=2V, ID=500µA.
The minimum saturated drain current is 15mA at VGS=0V, VDS=2V.
The maximum noise figure for the MGF4916G is 0.8dB at VDS=2V, ID=10mA.
The minimum associated gain is 12dB at VDS=2V, ID=10mA.
The maximum total power dissipation is 50mW.
The device is packaged in a GD-16 surface mount package.