| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,910 pcs
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2910 pcs | On Request | 1 | On Request | On Request | 99/01+ | On Request | On Request |
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| SVHC Present | |
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| Tape & Reel |
The MGF4916G, part of the MGF491xG Series from Mitsubishi Semiconductor, is a High Electron Mobility Transistor (HEMT) designed for low-noise applications in the L to Ku frequency bands. Its hermetically sealed metal-ceramic package minimizes parasitic losses and is ideal for microstrip circuit integration.
Key electrical characteristics include a typical transconductance of 22mS at VDS=2V and ID=10mA. The device offers a minimum noise figure of 0.80dB (MAX) at 12GHz for the MGF4916G model, and a minimum associated gain of 12.0dB at the same frequency and bias conditions. The recommended bias conditions are VDS=2V and ID=10mA.
Absolute maximum ratings include a total power dissipation of 50mW at 25°C ambient temperature, with a maximum channel and storage temperature of 125°C. The device is supplied in a GD-16 package, suitable for surface mounting and supplied on tape and reel.
This component is well-suited for use in low noise amplifiers operating within the L to Ku band spectrum.
The MGF4916G is available in a GD-16 surface mount package.
The minimum gate-to-drain breakdown voltage is -1.5V at VGS=-2V, VDS=0V.
The maximum gate-to-source leakage current is -1.5µA at VGS=-2V, VDS=0V.
The maximum saturated drain current is 60mA at VDS=2V.
The maximum total power dissipation is 50mW at ambient temperature 25°C.
The minimum associated gain is 12.0dB at f=12GHz, VDS=2V, ID=10mA.
The maximum minimum noise figure is 0.80dB at f=12GHz, VDS=2V, ID=10mA for the MGF4916G.