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283 pcs
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283 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Fujitsu Semiconductor MB60VH139PF-G-LBND is a JFET designed for various electronic applications. It offers a maximum breakdown voltage of 60V and a typical drain current (Idss) of 139mA when Vgs is 0V. The device operates within a temperature range of -40°C to 85°C.
This JFET is packaged in a surface-mount SC-70, SOT-323 configuration, making it suitable for compact circuit designs. It complies with RoHS3 standards and has an MSL rating of 1, indicating unlimited shelf life under recommended storage conditions. The REACH status is unaffected.
Key electrical characteristics include a typical Vgs(th) of 1.5V, input capacitance of 5.5pF, output capacitance of 3.5pF, and reverse transfer capacitance of 1.0pF. These specifications make the MB60VH139PF-G-LBND a versatile component for signal amplification and switching applications in discrete semiconductor circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MB60VH139PF-G-LBND has a maximum breakdown voltage of 60V.
The typical drain current (Idss) for the MB60VH139PF-G-LBND is 139mA at Vgs = 0V.
This JFET operates in a temperature range of -40°C to 85°C.
The MB60VH139PF-G-LBND is available in a surface mount SC-70, SOT-323 package.
Yes, the MB60VH139PF-G-LBND is RoHS3 compliant.