| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors LTE21009R is a silicon NPN bipolar transistor designed for RF applications. It operates within the C Band and has a specified collector current of 0.25A.
This transistor is part of the discrete semiconductor products category, specifically within single transistors. Its construction utilizes diffused emitter ballasting resistors and a self-aligned process, entirely ion implanted and with gold sandwich metallization for optimum temperature profile and excellent performance.
Key features include its NPN silicon technology and suitability for RF small signal applications. The component is manufactured by NXP Semiconductors.
This part is suitable for various RF circuit designs requiring a reliable NPN transistor with specific performance characteristics in the C Band frequency range.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector current for the LTE21009R transistor is 0.25A.
The LTE21009R is an NPN silicon bipolar transistor.
The LTE21009R transistor operates in the C Band.
Yes, the LTE21009R is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the LTE21009R is 1 Unlimited.
