| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64 pcs
|
64 pcs | On Request | 1 | On Request | On Request | 98+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Technology | |
| Transistor Type |
The Philips BLV99/SL is an NPN silicon planar epitaxial transistor designed for RF power applications in the Ultra High Frequency (UHF) band. It features emitter-ballasting resistors for optimal temperature profile and gold metallization for excellent reliability.
This transistor is encapsulated in a 4-lead SOT172D envelope. Its construction utilizes silicon technology and is suitable for high-frequency operations.
Key specifications include its NPN transistor type, silicon technology, and UHF frequency band operation. The part number BLV99/SL is associated with Philips Semiconductors.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLV99/SL is an NPN silicon RF power bipolar transistor.
The BLV99/SL transistor is made using silicon technology.
The BLV99/SL operates in the UHF frequency band.
The BLV99/SL is encapsulated in a SOT172D envelope.
The BLV99/SL is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BLV99/SL is 1 Unlimited.
The BLV99/SL is REACH Unaffected.