| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SC3783 is a high-performance NPN silicon power bipolar transistor. It is engineered for demanding applications requiring high voltage and fast switching speeds, such as switching regulators and high-speed DC-DC converters.
Key electrical characteristics include a high collector-emitter breakdown voltage (V(BR)CEO) of 800V and a continuous collector current (I(C)) rating of 5A. The transistor utilizes a triple diffused type construction, contributing to its high-speed switching capabilities.
Packaged in a plastic/epoxy casing with 3 pins, the 2SC3783 is suitable for various power management and switching circuits. Its silicon construction ensures reliability and performance in its intended applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage (V(BR)CEO) for the 2SC3783 is 800V.
The continuous collector current (I(C)) for the 2SC3783 is 5A.
The 2SC3783 is an NPN silicon power bipolar transistor.