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LTC4442EMS8E The LT LTC4442EMS8E-1#PBF is a half-bridge N-channel MOSFET gate driver IC. It operates with a high side voltage of up to 42V and offers fast switching times.
Mfr Part #:

LTC4442EMS8E

Available from 1 distributors
Mfr Name: LT
LT
The LT LTC4442EMS8E-1#PBF is a half-bridge N-channel MOSFET gate driver IC. It operates with a high side voltage of up to 42V and offers fast switching times.
✓ Total Stock: 24 pcs

LTC4442EMS8E Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
24 pcs
On Request
24 pcs On Request 1 On Request On Request 1131+ On Request On Request
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LTC4442EMS8E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
SVHC Present
Tape & Reel
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LTC4442EMS8E Description

Short technical summary and product information.

The LTC4442EMS8E-1#PBF from LT is a half-bridge gate driver IC designed for driving N-channel MOSFETs. It features a high side voltage capability of up to 42V, making it suitable for various power management applications.

 

This gate driver IC provides a peak output current of 2.4A, with fast rise and fall times of 12ns and 8ns respectively. It operates within a voltage range of 6V to 9.5V and is designed for surface mount applications.

 

The device is housed in an 8-MSOP-EP package, offering a compact solution for space-constrained designs. Its operating temperature range is from -40°C to 125°C (TJ), ensuring reliable performance in demanding environments.

 

Key specifications include its non-inverting input type and half-bridge configuration, providing efficient control for power switching circuits.

LTC4442EMS8E Quick Information

Product Type: Gate Driver IC
Series: LTC4442
Canonical Name: LT LTC4442EMS8E-1#PBF Half-Bridge N-Channel MOSFET Gate Driver IC
Subcategory: N-Channel MOSFET Gate Driver

LTC4442EMS8E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LTC4442EMS8E Features

  • Half-bridge N-channel MOSFET gate driver.
  • Up to 42V high side voltage capability.
  • 2.4A peak output current.
  • Fast 12ns and 8ns switching times.
  • Surface mount 8-MSOP-EP package.

LTC4442EMS8E Applications

  • Suitable for half-bridge power converter topologies.
  • Used in DC-DC converters and power supplies.
  • Ideal for motor drive applications.
  • Can be used in class D audio amplifiers.
  • Designed for battery-powered systems.

LTC4442EMS8E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the LTC4442EMS8E?

-40°C to 125°C (junction).

What package is the LTC4442EMS8E available in?

8-MSOP-EP (8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad).

What is the gate drive voltage range?

6V to 9.5V.

What is the peak output current of the LTC4442EMS8E?

2.4A source and sink.

What are the rise and fall times?

12ns rise time, 8ns fall time.

Is the LTC4442EMS8E a half-bridge gate driver?

Yes, it is a half-bridge gate driver.

What is the maximum bootstrap high-side voltage?

42V.

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