| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present | |
| Storage Temperature |
The LMBTA06LT1G is a single bipolar junction transistor (BJT) manufactured by LRC Leshan Radio Co Ltd. This component is designed for various electronic applications requiring a reliable transistor.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 80V and a continuous Collector Current (IC) of 500mA. The DC Current Gain (hFE) is a minimum of 100 at both 10mA and 100mA collector currents. It also features a Collector-Emitter Saturation Voltage (VCE(sat)) of 0.25V maximum and a Base-Emitter Saturation Voltage (VBE(sat)) of 1.2V maximum under specific test conditions.
The transistor has a Current-Gain-Bandwidth Product (fT) of 100MHz at 2.0V VCE and 10mA IC. The maximum power dissipation is 330mW on an FR-4 board at 25°C ambient temperature, with a thermal resistance of 378°C/W.
Packaged in a SOT23 surface mount package, the LMBTA06LT1G is supplied on tape and reel with 3000 units per reel. It operates within a junction and storage temperature range of -55°C to +150°C. The device is declared to be RoHS3 compliant and Halogen Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the LMBTA06LT1G is 80V.
The continuous Collector Current (IC) rating for the LMBTA06LT1G is 500mA.
The DC Current Gain (hFE) of the LMBTA06LT1G is a minimum of 100 at 10mA and 100mA collector currents.
The LMBTA06LT1G transistor is supplied in a SOT23 package.
The operating junction and storage temperature range for the LMBTA06LT1G is -55°C to +150°C.