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K4T1G164QF_BCE7

The Samsung K4T1G164QF-BCE7 is a 1Gb DDR2 SDRAM memory chip. It operates at 1.8V and offers data transfer rates up to 800Mb/sec/pin.

✓ Total Stock: 22,290 pcs

$ Price Range: $1.28

K4T1G164QF_BCE7 Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	13,908 pcs On Request	13908 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	8,100 pcs On Request	8100 pcs	On Request	1	On Request	On Request	11+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	197 pcs On Request	197 pcs	On Request	1	On Request	On Request	13+	On Request	On Request
Rayichip ✓ Non-Authorised Inventory information	85 pcs On Request	85 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

K4T1G164QF_BCE7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Samsung Electronics
Capacity	1Gb
Halogen Free	Halogen Free
Memory Organization	32Mbit x 4 I/Os x 8banks
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C

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K4T1G164QF_BCE7 Description

Short technical summary and product information.

The Samsung K4T1G164QF-BCE7 is a 1Gb DDR2 SDRAM memory chip designed for high-speed applications. It operates with a standard VDD of 1.8V ± 0.1V and VDDQ of 1.8V ± 0.1V.

This synchronous device achieves double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800). Key features include 8 banks, programmable CAS Latency (3-6), programmable Additive Latency (0-5), and a write latency equal to read latency minus one. The burst length can be programmed for 4 or 8, with sequential or interleave burst mode.

Additional features include bi-directional differential data-strobe, Off-Chip Driver (OCD) impedance adjustment, and On Die Termination (ODT) at 50 ohms. The chip supports high-temperature self-refresh rate enable and has an average refresh period of 7.8us at lower than 85°C and 3.9us at 85°C.

The K4T1G164QF-BCE7 is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks, or 8Mbit x 16 I/Os x 8 banks device. It comes in a BGA-84 package and is RoHS compliant.

K4T1G164QF_BCE7 Quick Information

Product Type: Memory Chip

Canonical Name: 1Gb F-die DDR2 SDRAM

Subcategory: DDR2 SDRAM

K4T1G164QF_BCE7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead Free

K4T1G164QF_BCE7 Estimated Pricing

Qty	Low	High
1+	$1.28	$1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K4T1G164QF_BCE7 Features

1Gb DDR2 SDRAM memory chip.
1.8V power supply operation.
Up to 800Mb/sec/pin data rate.
Programmable CAS and Additive Latency.
BGA-84 package.

K4T1G164QF_BCE7 Applications

Ideal for DDR2-800 memory subsystems.
Used in networking and telecom equipment.
Suitable for industrial control systems.
Common in embedded computing designs.
Supports high-bandwidth data processing.

K4T1G164QF_BCE7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the supply voltage for the K4T1G164QF-BCE7?

The supply voltage is 1.8V nominal for both VDD and VDDQ.

What clock frequencies does this DDR2 SDRAM support?

It supports 333MHz for 667Mb/sec/pin and 400MHz for 800Mb/sec/pin data rates.

How many banks does this memory device have?

It has 8 banks.

What CAS latency values are supported?

Programmable CAS latency values of 3, 4, 5, and 6 are supported.

What burst lengths are available?

Burst lengths of 4 and 8 are available, with programmable sequential or interleave mode.

What is the memory capacity of the K4T1G164QF-BCE7?

The memory capacity is 1Gb (Gigabit).

What package options are available for this part?

It is available in 84-ball BGA and 60FBGA/84FBGA packages.