LMBT4401LT1G The LMBT4401LT1G is an NPN silicon transistor from LRC Leshan Radio Co Ltd. It is designed for general-purpose applications and comes in a SOT-23 surface-mount package.
Mfr Part #:

LMBT4401LT1G

Available from 4 distributors
Mfr Name: LRC Leshan Radio Co Ltd
LRC Leshan Radio Co Ltd
The LMBT4401LT1G is an NPN silicon transistor from LRC Leshan Radio Co Ltd. It is designed for general-purpose applications and comes in a SOT-23 surface-mount package.
Total Stock: 52,368 pcs
$ Price Range: $0.77

LMBT4401LT1G Available from 4 distributors

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LMBT4401LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Mounting Type

LMBT4401LT1G Description

Short technical summary and product information.

The LMBT4401LT1G is a general-purpose NPN silicon transistor manufactured by LRC Leshan Radio Co Ltd. This component features a collector-emitter breakdown voltage of up to 60V and a maximum continuous collector current of 150mA, with a peak current capability of 600mA. It has a maximum power dissipation of 225mW.

 

The transistor exhibits a collector-emitter saturation voltage of 400mV at 15mA collector current and 15mA base current. It is supplied in a compact SOT-23 surface-mount package, making it suitable for space-constrained applications.

 

This device is declared compliant with RoHS requirements and is Halogen Free. Its Moisture Sensitivity Level (MSL) is 1, indicating unlimited usability under standard conditions. The REACH status is unaffected.

 

Applications for the LMBT4401LT1G include general switching and amplification tasks in various electronic circuits.

LMBT4401LT1G Quick Information

Product Type: NPN Transistor
Canonical Name: LMBT4401LT1G NPN Silicon Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

LMBT4401LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

LMBT4401LT1G Estimated Pricing

Qty Low High
1+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

LMBT4401LT1G Features

  • NPN silicon general purpose transistor
  • 60V collector-emitter breakdown voltage
  • 600mA maximum collector current
  • 225mW maximum power dissipation
  • SOT-23 surface mount package

LMBT4401LT1G Applications

  • Suitable for low-voltage switching applications.
  • Used in general-purpose amplification circuits.
  • Ideal for signal switching in compact devices.
  • Applicable in automotive and industrial electronics.
  • Designed for surface-mount circuit integration.

LMBT4401LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage for the LMBT4401LT1G?

The maximum collector-emitter breakdown voltage is 60V.

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current is 150mA.

What is the maximum power dissipation of the LMBT4401LT1G?

The maximum power dissipation is 225mW.

What is the package type for the LMBT4401LT1G?

The LMBT4401LT1G is supplied in a SOT-23 surface-mount package.

Is the LMBT4401LT1G RoHS compliant?

Yes, the material of the product is compliant with RoHS requirements.

What is the Moisture Sensitivity Level (MSL) for the LMBT4401LT1G?

The Moisture Sensitivity Level (MSL) is 1.

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