| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,396,272 pcs
|
1396272 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8 pcs
|
8 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The KSE44H11TU from On Semiconductor is an NPN bipolar junction transistor (BJT) designed for robust performance in electronic circuits. It offers a collector-emitter breakdown voltage of 80V and can handle a maximum collector current of 10A, making it suitable for power handling applications.
This transistor operates with a DC current gain (hFE) of at least 60 at 2A and 1V. Its saturation voltage (Vce Sat) is a maximum of 1V at 400mA and 8A, indicating efficient switching characteristics. The transition frequency is rated at 50MHz, suggesting suitability for moderate-frequency applications.
The KSE44H11TU has a maximum power dissipation of 1.67W and can operate at junction temperatures up to 150°C. It is housed in a TO-220-3 package and features a through-hole mounting type, common for power transistors requiring heat dissipation.
This component is RoHS3 compliant, indicating adherence to environmental regulations regarding hazardous substances. Its MSL rating is 1, signifying unlimited moisture sensitivity, which is typical for many semiconductor devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the KSE44H11TU transistor is 10 A.
The collector-emitter breakdown voltage of the KSE44H11TU transistor is 80 V.
The maximum operating junction temperature for the KSE44H11TU transistor is 150°C.
The KSE44H11TU transistor is supplied in a TO-220-3 package.
The KSE44H11TU transistor is mounted using the through-hole method.
The minimum DC current gain (hFE) for the KSE44H11TU transistor is 60 at 2A and 1V.
The transition frequency of the KSE44H11TU transistor is 50MHz.