KSE44H11TU
On Semiconductor
The On Semiconductor KSE44H11TU is an NPN bipolar junction transistor designed for various applications. It features a breakdown voltage of 80V and a maximum collector current of 10A.
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1,396,872 pcs
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1396872 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSE44H11 is an NPN bipolar junction transistor manufactured by On Semiconductor. This component is designed for applications requiring robust performance, featuring a collector-emitter breakdown voltage of 80V and a maximum collector current of 10A.
Key electrical characteristics include a maximum power dissipation of 1.67W and a transition frequency of 50MHz. The DC current gain (hFE) is a minimum of 60 at 2A and 1V. The saturation voltage (Vce) is a maximum of 1V at 400mA and 8A, with a maximum collector cutoff current of 10µA.
This transistor is housed in a TO-220-3 package and utilizes a through-hole mounting type, making it suitable for various circuit designs. The operating junction temperature can reach up to 150°C, requiring careful thermal management in high-power applications.
The KSE44H11 is a versatile component suitable for power amplification, signal processing, and switching circuits, including RF applications like oscillators and mixers, as well as power management and high-frequency digital circuits.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating junction temperature for the KSE44H11 transistor is 150°C.
The collector-emitter breakdown voltage of the KSE44H11 is 80V.
The maximum collector current for the KSE44H11 transistor is 10A.
The KSE44H11 transistor is supplied in a TO-220-3 package.
The KSE44H11 transistor is mounted using the through-hole method.
The KSE44H11 transistor is RoHS3 Compliant.