KSD471ACYTA
On Semiconductor
The KSD471ACYTA is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 1A collector current.
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23,464 pcs
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23464 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The KSD471AYBU is a single NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for through-hole mounting and comes in a TO-92-3 package.
Key electrical specifications include a collector-emitter breakdown voltage of 30V and a maximum collector current of 1A. The device offers a minimum DC current gain (hFE) of 120 at 100mA and 1V, with a Vce saturation of 500mV maximum at 100mA and 1A. Its transition frequency is rated at 130MHz, and it can dissipate up to 800mW of power.
The operating temperature range for this transistor is up to 150°C (TJ). It is suitable for various general-purpose amplification and switching applications where these specifications are required.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 30V.
The maximum continuous collector current is 1A.
The operating temperature range is up to 150°C (TJ).
It is supplied in a TO-226-3, TO-92-3 (TO-226AA) package.
It is designed for through-hole mounting.