KSD471ACYTA The KSD471ACYTA is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 1A collector current.
Mfr Part #:

KSD471ACYTA

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The KSD471ACYTA is an NPN Epitaxial Silicon Transistor from ON Semiconductor. It features a 30V collector-emitter voltage and 1A collector current.
Total Stock: 9,000 pcs
$ Price Range: $0.99

KSD471ACYTA Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,000 pcs
8000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

KSD471ACYTA Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = -100 /C 0109 A, IE = 0)
Breakdown Voltage (Minimum @ IC = 10 mA, IB = 0)
Breakdown Voltage (Minimum @ IE = -100 /C 0109 A, IC = 0)
Collector Current
Collector Cut-Off Current
Collector Power Dissipation
Collector-Emitter Voltage
Current
Current Gain (Minimum/Maximum @ VCE = 1 V, IC = 100 mA)
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Lead Style
Mounting Type
Operating Temperature
Output Capacitance
Power
Saturation Voltage (Maximum @ IC = 1 A, IB = 0.1 A)
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

KSD471ACYTA Description

Short technical summary and product information.

The KSD471ACYTA is an NPN Epitaxial Silicon Transistor manufactured by ON Semiconductor. This component is designed for audio frequency power amplifier applications and is complementary to the KSB1151.

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 1A. The device offers a DC current gain (hFE) ranging from 120 to 240 at 100mA and 1V. Its current gain bandwidth product (fT) is 130MHz at 6V and 10mA, with an output capacitance (Cob) of 16pF at 6V.

 

The transistor has a collector power dissipation (PC) of 800mW and a junction temperature (TJ) up to 150°C. It is packaged in a TO-92-3 (TO-226-3, TO-92-3 (TO-226AA) Formed Leads) package and is designed for through-hole mounting.

 

Absolute maximum ratings include a collector-base voltage (VCBO) of 40V, emitter-base voltage (VEBO) of 5V, and storage temperature from -55°C to +150°C.

KSD471ACYTA Quick Information

Product Type: NPN Epitaxial Silicon Transistor
Canonical Name: KSD471ACYTA NPN Epitaxial Silicon Transistor
Subcategory: Bipolar (BJT) - Single

KSD471ACYTA Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

KSD471ACYTA Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

KSD471ACYTA Features

  • NPN Epitaxial Silicon Transistor.
  • 30V Collector-Emitter Voltage.
  • 1A Continuous Collector Current.
  • 800mW Power Dissipation.
  • TO-92 Through Hole Package.

KSD471ACYTA Applications

  • Suitable for audio frequency power amplification.
  • Used in switching and amplification circuits.
  • Ideal for low-voltage switching applications.
  • Applicable in signal processing and control systems.

KSD471ACYTA FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The collector-emitter voltage (VCEO) is 30V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 1A.

What is the power dissipation?

The power dissipation (PC) is 800mW.

What is the operating junction temperature?

The operating junction temperature (TJ) is 150°C.

What package type is the KSD471ACYTA in?

The KSD471ACYTA is in a TO-92-3 package.

How is the KSD471ACYTA mounted?

The KSD471ACYTA is a through-hole mounted component.

What is the DC current gain (hFE)?

The DC current gain (hFE) is a minimum of 120 at 100mA and 1V.

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