K9WBG08U1MPIB0

The Samsung K9WBG08U1M-PIB0 is a high-density NAND Flash Memory with a 16G-bit capacity and an additional 512M-bit spare area. It is designed for cost-effective solid-state applications, offering a reliable solution for portable devices and file storage.

Key electrical characteristics include a voltage supply range of 2.7V to 3.6V, with a typical operation at 3.3V. The memory array is organized as (2G + 64M) x 8 bits, with a data register of (4K + 128) x 8 bits. Program operations take a typical 200µs for a (4K + 128)Byte page, and erase operations take a typical 1.5ms for a (256K + 8K)Byte block. Data can be read serially with a minimum cycle time of 25ns.

This NAND Flash Memory boasts an endurance of 100K program/erase cycles with ECC, ensuring data integrity for write-intensive systems. Data retention is rated for 10 years. The device utilizes a command/address/data multiplexed I/O port and features hardware data protection against power transitions. It is housed in a TSOP-48 package, suitable for surface mounting.

The K9WBG08U1M-PIB0 is an optimal choice for applications requiring large non-volatile storage, such as solid-state file storage and other portable electronics where data persistence is crucial.