K6T0808C1D-TF70
Samsung Electronics
The K6T0808C1D-TF70 is a 32Kx8 bit Low Power CMOS Static RAM from Samsung Electronics. It operates with a 4.5-5.5V supply and features speeds of 55/70ns.
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943 pcs
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The K6T4016U3B-TF85 is a 256K x 16 bit low power and low voltage CMOS Static RAM from Samsung Electronics. Fabricated using advanced CMOS process technology, this SRAM family supports various operating temperature ranges and offers small package types for system design flexibility.
Key electrical specifications include a power supply voltage range of 3.0V to 3.6V for the KM68V4000B family and 2.7V to 3.3V for the KM68U4000B family. It features a low data retention voltage of 2V minimum and TTL compatible three-state outputs. Standby current is typically 15μA for commercial grades and 20μA for industrial grades, with operating currents around 60mA.
Available speeds range from 70ns to 85ns depending on the specific part number and operating conditions. The K6T4016U3B-TF85 is supplied in a 44-TSOP2-400F/R package, suitable for various system designs requiring compact memory solutions. This component is designed for low power consumption and battery back-up applications due to its low data retention voltage and current.
The operating voltage is 2.7V to 3.3V.
The maximum access time is 85ns.
The package type is 44-TSOP2-400F/R.
The memory organization is 256K words by 16 bits (256K x 16).
The maximum standby current is 15μA.
The maximum operating current is 60mA.