| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present | |
| Speed |
The K6T0808C1D-TF70 is a 32Kx8 bit Low Power CMOS Static RAM manufactured by Samsung Electronics using advanced TFT CMOS process technology. This memory component supports a wide power supply voltage range of 4.5V to 5.5V and offers access times of 55ns or 70ns.
Key features include a low data retention voltage of 2V minimum, making it suitable for battery-backed applications. The outputs are three-state and TTL compatible. The device is available in multiple package types, including 28-DIP-600B, 28-SOP-450, and 28-TSOP1-0813.4 F/R, providing flexibility for system design.
This SRAM is designed for low power consumption, with a typical standby current (ISB1) of 5μA and an operating current (ICC2) of 60mA. It supports various operating temperature ranges, though the specific range for this part number requires confirmation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K6T0808C1D-TF70 has a 32Kx8 bit organization.
The operating voltage range is 4.5 to 5.5 V.
The speed options are 55/70 ns.
The minimum data retention voltage is 2 V.
Available package types include 28-DIP-600B, 28-SOP-450, and 28-TSOP1-0813.4 F/R.
The standby current (ISB1) is a maximum of 5 μA.
The operating current (ICC2) is a maximum of 60 mA.