K6T4008C1B-GF70
Samsung Electronics
The Samsung Electronics K6T4008C1B-GF70 is a 512Kx8 low power CMOS Static RAM. It operates with a supply voltage of 4.5V to 5.5V and features speeds of 55ns or 70ns.
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2,010 pcs
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2010 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Samsung Electronics K6T4008C1B-VB55 is a 512Kx8 bit low power CMOS static RAM. Fabricated using advanced CMOS process technology, this memory component supports various operating temperature ranges and package types for system design flexibility. It operates with a power supply voltage range of 4.5V to 5.5V and offers speeds of 55ns or 70ns.
Key electrical characteristics include a low data retention voltage of 2V minimum, a standby current of 100μA maximum, and an operating current of 80mA maximum. The device features three-state outputs and is TTL compatible. It is available in 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R package types, providing flexibility for different system designs.
This SRAM is suitable for applications requiring reliable data storage with low power consumption. Its organization and speed make it a versatile component for embedded systems and other memory-intensive designs.
The K6T4008C1B-VB55 has a 512K x 8 bit organization.
The operating voltage range is 4.5V to 5.5V.
The available speed options are 55ns and 70ns.
It is available in 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R package types.
The maximum standby current is 100μA.
The maximum operating current is 80mA.