Mfr Part #:

K6T4008C1B-GF70

The Samsung Electronics K6T4008C1B-GF70 is a 512Kx8 low power CMOS Static RAM. It operates with a supply voltage of 4.5V to 5.5V and features speeds of 55ns or 70ns.

✓ Total Stock: 9,516 pcs

$ Price Range: $1.28

K6T4008C1B-GF70 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	9,516 pcs On Request	9516 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

K6T4008C1B-GF70 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Samsung Electronics
SVHC Present	Not Present
Speed	55ns / 70ns

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K6T4008C1B-GF70 Description

Short technical summary and product information.

The Samsung Electronics K6T4008C1B-GF70 is a 512Kx8 bit low power CMOS Static RAM. Fabricated using advanced CMOS process technology, this memory component supports various operating temperature ranges and package types for system design flexibility.

Key electrical specifications include a power supply voltage range of 4.5V to 5.5V, with speeds available in 55ns or 70ns. It offers a standby current of 100μA maximum and an operating current of 80mA maximum. The device also supports a low data retention voltage of 2V minimum, suitable for battery back-up operations.

This SRAM family is available in multiple package types, including 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R. The advanced CMOS process technology ensures reliable performance for various applications requiring static RAM functionality.

K6T4008C1B-GF70 Quick Information

Product Type: CMOS SRAM

Series: K6T4008C1B

Canonical Name: 512Kx8 Low Power CMOS Static RAM

Subcategory: SRAM

K6T4008C1B-GF70 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

K6T4008C1B-GF70 Estimated Pricing

Qty	Low	High
1+	$1.28	$1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K6T4008C1B-GF70 Features

512Kx8 organization for ample data storage.
Wide 4.5V to 5.5V operating voltage range.
Fast 55ns or 70ns access speeds.
Low power consumption in standby and operation.
Available in DIP, SOP, and TSOP packages.

K6T4008C1B-GF70 Applications

Suitable for embedded system memory.
Ideal for data logging applications.
Used in consumer electronics devices.
Applicable for battery-backed systems.

K6T4008C1B-GF70 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the memory organization of the K6T4008C1B-GF70?

The K6T4008C1B-GF70 has a memory organization of 512K x 8 bits.

What is the operating voltage range for this SRAM?

The operating voltage range is 4.5V to 5.5V.

What are the available speed grades for the K6T4008C1B-GF70?

The available speed grades are 55ns and 70ns.

What is the maximum operating current of this device?

The maximum operating current is 80mA.

What is the standby current of the K6T4008C1B-GF70?

The maximum standby current is 100μA.

What package types are available for this part?

Available packages include 32-DIP-600, 32-SOP-525, and 32-TSOP2-400F/R.

What is the minimum data retention voltage?

The minimum data retention voltage is 2V.

K6T4008C1B-GF70 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.

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K6T4008C1B-VB55

Samsung Electronics

The Samsung Electronics K6T4008C1B-VB55 is a 512Kx8 low power CMOS static RAM. It operates with a supply voltage range of 4.5V to 5.5V and features speeds of 55ns or 70ns.

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