SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,200 pcs
|
45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature |
The Samsung Electronics K4T51163QI-HCF7 is a high-speed memory component belonging to the DDR2 SDRAM family. This specific part offers a memory capacity of 256Mbit and operates at a clock frequency of 800MHz, making it suitable for applications requiring fast data access.
The component is supplied in an FBGA (Fine-Pitch Ball Grid Array) package, designed for surface mounting. This packaging type facilitates efficient integration onto printed circuit boards and contributes to compact electronic designs.
Environmental compliance for the K4T51163QI-HCF7 includes RoHS3 compliance and it is designated as Lead Free. The Moisture Sensitivity Level (MSL) is rated as 1 Unlimited, indicating a high degree of resistance to moisture absorption during handling and assembly processes. REACH status is noted as unaffected.
This memory component is part of Samsung Electronics' extensive range of memory solutions, designed to meet the demands of various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The K4T51163QI-HCF7 is a DDR2 SDRAM memory.
The memory size is 256 Mbit.
The operating frequency is 800 MHz.
The K4T51163QI-HCF7 uses an FBGA package.
The K4T51163QI-HCF7 is a surface mount component.
The K4T51163QI-HCF7 is RoHS3 Compliant.
The MSL is 1 Unlimited.
