K4A8G085WB
Samsung Electronics
The Samsung K4A8G085WB is a DDR DRAM memory integrated circuit. It features a maximum clock frequency of 1200MHz and an access time of 0.175ns.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,774 pcs
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2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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128 pcs
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128 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K4A8G085WB-BCRC from Samsung Electronics is a high-performance DDR DRAM memory integrated circuit. It is designed for applications requiring fast data access, featuring a maximum access time of 0.175ns and a maximum clock frequency of 1200MHz.
This memory IC operates at a nominal supply voltage of 1.2V. It has a maximum supply current of 0.173A and a maximum standby current of 0.016A. The operating temperature range is from 0°C to 85°C.
The component is housed in an R-PBGA-B78 package with 78 terminals. The terminal position is bottom. It is classified as DDR DRAM memory.
This part is RoHS3 compliant and has an MSL rating of 1 Unlimited. It is suitable for various electronic designs requiring reliable and fast memory solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 1.2V.
The maximum clock frequency is 1200MHz.
The maximum access time is 0.175ns.
Maximum supply current is 0.173A and standby current is 0.016A.
The device operates from 0°C to 85°C.
The device is in an R-PBGA-B78 package with 78 terminals.
Memory type is DDR DRAM.