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K4A8G085WB The Samsung K4A8G085WB is a DDR DRAM memory integrated circuit. It features a maximum clock frequency of 1200MHz and an access time of 0.175ns.
Mfr Part #:

K4A8G085WB

Available from 1 distributors
Mfr Name: Samsung Electronics
Samsung Electronics
The Samsung K4A8G085WB is a DDR DRAM memory integrated circuit. It features a maximum clock frequency of 1200MHz and an access time of 0.175ns.
✓ Total Stock: 256 pcs
$ Price Range: $1.28

K4A8G085WB Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
256 pcs
On Request
256 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

K4A8G085WB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Clock Frequency
Lead Style
Memory Type
Operating Voltage
SVHC Present
Storage Temperature
Supply Current
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K4A8G085WB Description

Short technical summary and product information.

The Samsung K4A8G085WB is a high-performance DDR DRAM memory integrated circuit designed for various electronic applications. This component operates at a nominal supply voltage of 1.2V and supports a maximum clock frequency of 1200MHz, ensuring fast data transfer rates.

 

Key electrical specifications include a maximum access time of 0.175ns and a maximum supply current of 0.173A. The device operates within a temperature range of 0°C to 85°C. The I/O type is specified as COMMON.

 

Packaged in a PBGA78 (R-PBGA-B78) with bottom terminal position, this memory IC is suitable for surface-mount designs. It is RoHS3 compliant and has an MSL rating of 1 Unlimited, indicating suitability for a wide range of manufacturing environments.

K4A8G085WB Quick Information

Product Type: DDR DRAM
Canonical Name: Samsung Electronics K4A8G085WB DDR DRAM
Subcategory: DDR DRAM

K4A8G085WB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

K4A8G085WB Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

K4A8G085WB Features

  • DDR DRAM memory integrated circuit.
  • Maximum clock frequency of 1200MHz.
  • Maximum access time of 0.175ns.
  • Operates at a nominal 1.2V supply voltage.
  • PBGA78 package for surface mounting.

K4A8G085WB Applications

  • Suitable for high-speed data processing.
  • Used in embedded system designs.
  • Applicable in computing memory modules.
  • Integrated into digital signal processing.
  • Designed for power-efficient applications.

K4A8G085WB FAQs

7 frequently asked questions generated from this part’s specifications.
What is the nominal operating voltage for the K4A8G085WB?

The nominal operating voltage for the K4A8G085WB is 1.2 V.

What is the package type for the K4A8G085WB?

The K4A8G085WB is supplied in a PBGA78 package.

What is the operating temperature range for the K4A8G085WB?

The K4A8G085WB operates within a temperature range of 0 °C to 85 °C.

What is the maximum clock frequency of the K4A8G085WB?

The maximum clock frequency of the K4A8G085WB is 1200 MHz.

What is the maximum supply current for the K4A8G085WB?

The maximum supply current for the K4A8G085WB is 0.173 A.

What is the maximum standby current of the K4A8G085WB?

The maximum standby current of the K4A8G085WB is 0.016 A.

What type of memory is the K4A8G085WB?

The K4A8G085WB is a DDR DRAM memory type.

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