| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,513 pcs
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2513 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance |
The K10A50D from Toshiba is a Silicon N-Channel MOSFET. This component is housed in a TO-220-3 package and is designed for through-hole mounting.
Key electrical specifications include a breakdown voltage of 500V and a maximum on-resistance (RDS(on) Max) of 720mΩ. The drain-source resistance is specified at 620mΩ. It also features an input capacitance of 1.05nF, a rise time of 25ns, and a fall time of 10ns.
Thermal characteristics are important for this device, with a maximum power dissipation of 45W. The operating temperature range spans from -55°C to 150°C.
This MOSFET is suitable for applications requiring high voltage handling and specific switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $165.89 | $165.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the K10A50D MOSFET is 500V.
The maximum on-resistance (RDS(on) Max) for the K10A50D is 720mΩ.
The maximum power dissipation of the K10A50D is 45W.
The K10A50D operates within a temperature range of -55°C to 150°C.
The K10A50D MOSFET is supplied in a TO-220-3 package.