| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The K6A65D from Toshiba is an N-Channel MOSFET designed for special purpose applications. It features a high drain-source voltage rating of 650V and a maximum on-resistance (RDS(on)) of 1.11Ω. The component has an input capacitance of 1.05nF, with rise and fall times of 25ns and 10ns respectively.
This MOSFET is housed in a TO-220-3 package and is designed for through-hole mounting. It has a maximum power dissipation of 45W and can operate within a temperature range of -55°C to 150°C. The K6A65D is suitable for various electronic designs requiring robust switching capabilities.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the K6A65D is 650V.
The K6A65D MOSFET has a maximum on-resistance of 1.11Ω.
The K6A65D MOSFET is supplied in a TO-220-3 package.
The K6A65D operates between -55°C and 150°C.